
Europe
: Fujitsu Microelectronics announced the sample availability of a
new 128Mbit Mobile Fast Cycle RAMTM device that adopts burst mode
operations complying with Common Specifications for Mobile RAM (COSMORAM)
Revision 3, for use in mobile phone applications. The device's high-speed
performance and large density make it ideal for 3G mobile phone vendors
looking to provide advanced applications.
The new
128Mbit device "MB82DBS04314C" and "MB82DBS08164C"
achieves maximum burst operation frequency of up to 108MHz with a
single 1.8Vsupply voltage, which satisfies the memory requirement
for next generation mobile phone applications. The device provides
a high data transfer rate as burst mode enables fast successive read/write
operation through synchronisation with the system clock.
The
maximum standby current of 300 microamps can be dramatically cut by
user configurable power-down modes such as sleep mode and partial
power-down mode. In addition, "MB82DBS04314C" is the first
128M PSRAM in the world that adopts a 32 bit address/data multiplexed
bus to realise more than double the data transfer rate compared with
existing products, by extension of the data bus width, and reduces
the pin-count for easier customer board design.
These
sample devices will be available in a monolithic package, and chip
or wafer form for embedded applications, including use in multi chip
package memory solutions.
This
announcement underlines Fujitsu's commitment to the
continued development and production of high value-added Application-Specific
Memory products, in response to customer requirements.
Main
Specifications
Part
Number MB82DBS04314C MB82DBS08164C
Density 128Mbit
I/O Configuration x32 Address/Data x16
multiplex bus
Supply Voltage V(dd) between 1.7 and 1.95 V
Burst Operation Frequency 108MHz
Clock Access Time (Max) t(ac) 6ns
Random Access Time t(ce) 70 ns
(Max)
Standby Current (Max) I(dds1) 300 microamps
Power Down Current I(ddps) 10 microamps
(Max)