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New Dual-Band UMTS PA Module Optimized for 3G Standards

9th November , 2004

Europe : TriQuint Semiconductor introduced its new TQM7M60001 dual-band UMTS power amplifier module (PAM) in a small form factor -- 4x4x1.1mm. The new module is designed to support cost-effective GSM / EDGE / UMTS (HSDPA) compressed mode phone architectures with only one antenna. The release comes on the eve of the Electronica trade faire in Munich, November 9-12, where the product will debut.

The new TQM7M6001 power amplifier module is a marketplace breakthrough because its biasing circuit is optimized for low idle current consumption (below 30mA), which results in increased handset talk time in UMTS mode. The TQM7M6001's output power (27.5dBm min.) offers ample margin for front-end losses, thus enabling cost-effective GSM / EDGE / UMTS multi-mode phone designs utilizing compressed-mode seamless hand-over to the GSM / EDGE global network. Furthermore, its linearity (7dB margin to ETSI-requirements for UMTS) offers sufficient margin for applying additional transmit channels for large-scale data transmission rates, enabling next generation 3G phones for HSDPA (High Speed Download Packet Access).

"This market-leading UMTS dual-band PAM offers outstanding performance enabling phone designers to meet UMTS system specifications in IMT2100 and PCS frequency bands over bias and temperature range, even for next generation 3G-phones supporting upcoming standards such as compressed-mode hand-over or HSDPA," said Juergen Hartmann, TriQuint Semiconductor UMTS Product Marketing Manager.

TriQuint's low cost design architecture allows the company to offer the TQM7M6001 at very competitive prices. Its 50-ohm input and output impedance, plus its outstanding suppression of unwanted harmonic signals and receive band noise save customers the need for external matching or suppression circuits and guarantees compliance with all of today's available front-end components (filters / duplexers / antenna switch modules). This combination of high-level integration and reduced part count cuts costs while reducing manufacturers' bill of materials.

-- The TQM7M6001 is a significant milestone in TriQuint's GSM RF roadmap, which includes a broad technology portfolio of PAMs, switches and filters. This new modules exemplifies the type of innovative engineering that TriQuint relies upon to set new standards in highly integrated RF front-end system architecture while simultaneously offering the best RF performance at the lowest size and cost targets.

Key product benefits include excellent RF&DC performance over temperature:

-- UMTS PCS/IMT2100 output power: +27.5dBm minimum

-- High/low output power modes

-- High efficiency: 40% in IMT2100-band in high output power mode, greater than 20% in IMT2100-band in low output power mode with low collector voltage operation

-- Low idle current less than 30mA in low output power mode

-- Extremely low harmonics: 2fo at -58dBc; 3fo, 4fo at -70dBc

-- Very low Rx-Noise: -139dBm/Hz

-- HSDPA compliant

-- 50-ohm input and output impedance; no external matching required

-- Minimum amount of external components

The TQM7M6001 UMTS dual-band PAM complements the TriQuint product family of GSM / GPRS / EDGE power amplifier modules, offering customers a single source for next generation front-end system needs.

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