Europe : Link Microtek, the exclusive representative for TriQuint Semiconductor Inc. in the UK and Ireland, has announced the introduction of the TQM7M6001, a UMTS power-amplifier module (PAM) that features an innovative biasing circuit optimised for low idle current consumption, resulting in increased handset talk time.

Housed in a compact 4.0 x 4.0 x 1.1mm LGA package, the new PAM is designed to support both 3G technology (WCDMA or HSDPA) and GSM/EDGE with only one antenna. The device is fabricated using TriQuint’s high-reliability InGaP HBT process.

The TQM7M6001’s minimum output power of 27.5dBm offers ample margin for front-end losses, thus enabling the development of cost-effective multi-mode phones that utilise compressed-mode seamless hand-over between GSM/EDGE and UMTS networks.

The 50 ohm input and output impedance of the new module, together with its outstanding suppression of unwanted harmonic signals and receive-band noise, eliminates the need for external matching or suppression circuits and guarantees compliance with all of today’s available front-end components, such as filters, duplexers and antenna switch modules.

Furthermore, the linearity of the TQM7M6001 is 7dB above ETSI requirements for UMTS, providing sufficient margin for the large-scale data transmission rates associated with the emerging HSDPA (high-speed downlink packet access) technology.

This new PAM exemplifies the type of innovative engineering that TriQuint relies upon to set new standards in highly integrated RF front-end system architecture while simultaneously offering the best RF performance at the lowest size and cost targets.