RF LDMOS Transistor Family for 3G Wireless

15th June , 2004

US : Freescale Semiconductor has introduced four new high-performance general-purpose amplifiers (GPAs) designed for a broad range of Class A, small-signal, high linearity radio frequency (RF) applications.

The MMG3001NT1, MMG3002NT1, MMG3003NT1, and MMG3005 amplifiers are the first in Freescale's newly established portfolio of GPA devices suitable for applications with frequencies ranging from 0.04 to 3.6 GHz. Target applications include cellular infrastructure, personal communications services (PCS), broadband wireless access (BWA), wireless local loop (WLL), Personal Handy-phone Systems (PHS), cable television (CATV) systems, VHF/UHF radio, universal mobile telecommunications systems (UMTS) and general small-signal RF designs.

Freescale's four new GPAs are heterojunction bipolar transistor (HBT) devices manufactured on indium gallium phosphide (InGaP) technology. A leader in gallium arsenide (GaAs) technology, Freescale manufactures InGaP HBT products at its state-of-the-art GaAs fab in Tempe, Arizona. Freescale is not only a leading supplier of high-power RF products but also a global provider of technical support designed to accelerate customers' design cycles and enhance time to market.

Freescale's InGaP HBT GPA portfolio is designed to provide manufacturers of RF amplifier products with a high-volume production source and drop-in replacement alternatives for existing sockets. Freescale's GPA devices have industry-leading low thermal resistance (30 degrees C/W) and have exceptional ruggedness. Other key advantages of Freescale's InGaP/GaAs HBT-based products include:

-- Outstanding reliability
-- Low leakage current
-- Excellent OIP3 linearity.

The four HBT general-purpose amplifiers operate from a single voltage supply and are internally matched to 50 ohms. Additional product family features include:

MMG3001NT1
-- Frequency: 0.04 - 3.6 GHz
-- P1dB: 18.5 dBm at 900 MHz
-- Power gain: 20 dB at 900 MHz
-- Third order output intercept point: 32 dBm at 900 MHz
-- Cost-effective SOT-89 surface mount package

MMG3002NT1
-- Frequency: 0.04 - 3.6 GHz
-- P1dB: 21 dBm at 900 MHz
-- Power gain: 20 dB at 900 MHz
-- Third order output intercept point: 37.5 dBm at 900 MHz
-- Cost-effective SOT-89 surface mount package

MMG3003NT1
-- Frequency: 0.04 - 3.6 GHz
-- P1dB: 24 dBm at 900 MHz
-- Power Gain: 20 dB at 900 MHz
-- Third-order output intercept point: 40.5 dBm at 900 MHz
-- Cost-effective SOT-89 surface mount package

MMG3005
-- Frequency: 0.4 - 2.4 GHz
-- P1dB: 30 dBm at 2140 MHz
-- Power gain: 16 dB at 2140 MHz
-- Third order output intercept point: 45 dBm at 2140 MHz
-- 5x5mm PQFN package

Pricing and Availability
The MMG3001NT1, MMG3002NT1 and MMG3003NT1 devices are now in full production. Samples of the MMG3005 are planned for Q4 2004. Additional GPA portfolio devices are planned to sample in early 2005. For pricing information, please contact Freescale Semiconductor, your local Freescale sales office, or your Freescale authorized distributor.

Visit the Freescale Semiconductor Booth #529 at the 2004 International Microwave Symposium (IMS) this week in Fort Worth, Texas, to learn more about Freescale's new GPA product portfolio and to see a performance demonstration of a plastic RF power LDMOS amplifier line-up operating at 2 GHz with two- channel N-CSMA modulation.

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