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Cypress Semiconductor Corporation, Infineon Technologies and Micron Technology announced that Cypress signed a co-development agreement with Micron and Infineon to collaborate in the development of the specifications for CellularRAM(TM) memory, a new multi-generation family of low-power Pseudo Static RAM (PSRAM) for wireless handsets.

CellularRAM memory is designed to meet the growing memory and bandwidth demands of future 2.5G and 3G handset designs. In addition to offering a lower cost/bit ratio than current solutions, this new type of Pseudo SRAM features SRAM-pin compatibility, external refresh-free operation and a low-power design. CellularRAM memory is a drop-in replacement for asynchronous low-power SRAM used currently in cell phone designs.
The purpose of this co-development effort is to provide customers with pin- and function-compatible products from multiple sources, based on a jointly developed specification for CellularRAM memory. Each company will design and manufacture the products using their own design and process technology.

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"As a contributor in the development of the CellularRAM specifications, Cypress is pleased to formally join Infineon Technologies and Micron Technology -- industry leaders in memory -- in this co-development effort," said Mario Martinez, strategic director for Cypress's Memory Products Division. "CellularRAM memory provides wireless handset designers all the benefits of a DRAM cell -- including a more cost-effective, higher-density and low-power consumption solution -- using a standard SRAM interface."
"CellularRAM memory provides designers a cost-effective solution for designing high-performance memory for next-generation wireless applications," said Mario Fazio, director of strategic marketing for Micron's Wireless Products. "With its substantial presence in the mobile handset memory market, Cypress will further strengthen the co-development and marketing efforts of CellularRAM."

"We are excited about the addition of Cypress to the co-development agreement," said Dr. Ernst Strasser, director of marketing for Infineon's Graphics and Specialty DRAM. "In addition to creating a third source for the industry, we are confident this cooperation will benefit all next-generation wireless customers seeking an outstanding memory solution for 2.5 and 3G handsets."

Based on a one-transistor DRAM cell, CellularRAM memory provides significant advances over traditional SRAM and a six-transistor (6T) SRAM cell, leveraging the technology and reduced size of a DRAM cell. These products operate at up to 108 MHz clock rates; run at an initial latency of 60 ns; and can achieve up to 216 MB/s (1.6 Gb/s) of peak bandwidth. CellularRAM memory also features a burst read and write mode that emulates an Intel(TM) W18 and Micron Flash Burst compatible protocol with various I/O voltage options.

Infineon and Mcron plan to make several CellularRAM devices available in the next 12 months. The first is a 32 Mb device, organized as 2M x 16 scheduled for initial availability in late 2002. A 16 Mb and 64 Mb device, organized as 1M x 16 and 4M x 16, respectively will follow shortly. All companies are jointly working on the definition of the next generation of the CellularRAM product family, a 128 Mb device, which is targeted for sampling in the second half of 2003.